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September 1, 1987IEEE Transactions on Electron Devices

Numerical simulation of nonstationary electron transport in Gunn devices in a harmonic mode oscillator circuit

Matthias Curow Andrew S. Hintz

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Abstract

The behavior of GaAs Gunn devices in harmonic mode oscillator circuits is numerically simulated taking nonstationary electron transport into account, The output power and dynamic impedances of the Gunn device are calculated for different passive circuitries. It is shown that for maximum output power the passive circuitry should behave like a series resonant circuit.

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Cite This Study

Curow et al. (1987) studied this question.

synapsesocial.com/papers/6a8d4b112fb87b53917fec48 https://doi.org/10.1109/t-ed.1987.23185

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