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In this review we consider SiC, GaN, AlN and ZnO as belonging to the same class of compound wide bandgap semiconductors with hexagonal (wurtzite) structure. As such these materials exhibit some similar physical and electronic properties, but the level of material quality is distinctly different. This issue has been discussed with an emphasis on SiC as being a material with most complicated structure and respectively some specific defects.
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Rositza Yakimova (2006) studied this question.
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