Analytical Model for Ballistic 2D Nanotransistors

This paper describes device models for the current-voltage (I–V) and capacitance-voltage (C–V) characteristics of ballistic nanotransistors based on two-dimensional (2D) materials. The proposed methodology introduces a novel, fully analytical, and explicit approach grounded in fundamental physical principles. This approach enables seamless integration into circuit simulators and provides clear insight into device operation. In contrast to the drift-diffusion models commonly found in the literature, this approach accurately describes the ballistic transport regime observed in state-of-the-art 2D nanotransistors. The proposed model was validated against both experimental andab initionumerical simulations from the literature for devices based on molybdenum disulfide (MoS2) and indium selenide (InSe). The results show excellent agreement with the reference datasets, confirming the model’s accuracy and its suitability for designing advanced nanoelectronic devices and circuits.