Modeling of Ballistic Monolayer Black Phosphorus MOSFETs

In this paper, we present two accurate physics-based models of ballistic metal-oxide-semiconductor field-effect transistors (MOSFETs), both using less than ten parameters. These models-the capacitor model and the virtual source model-are based on the Landauer-Büttiker formalism. We show that the nonthermalization of charge carriers in the channels of ballistic MOSFETs leads to two critical effects that need to be considered in the modeling: the ballistic drain-induced barrier lowering (DIBL) effect and the floating source effect. The ballistic DIBL effect is responsible for a drain voltage dependence of the DIBL parameter; the floating source effect intensifies the injection of high-energy carriers from the source as the gate voltage increases. Specifically, the analysis is carried out on devices composed of monolayer black phosphorus, a 2-D semiconductor with unique electronic and mechanical properties, which make it a promising candidate for 2-D digital logic applications.