Laser annealing of the implanted gate region of n-channel m.o.s. transistors is described. The threshold shift against dose is measured for laser-annealed and thermally annealed samples. Comparison with theoretical threshold shift shows that laser annealing yields full electrical activation without diffusive redistribution, in contrast to thermal annealing at 960°C.
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G. Zimmer (1979) studied this question.
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