The combination of thermally grown oxide on silicon has achieved preeminence in technology because of its remarkable properties. As a result of extensive investigation, many of the properties of the interface are well understood. This article reviews the main lines of evidence for our present understanding. The energy-band relations at the silicon–SiO2 interface have been determined mainly by measurements of internal photoemission. These data can be combined with the results of C–V measurements to give a detailed picture of the behavior of mobile ions in the oxide.
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Richard M. Williams (1977) studied this question.