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The threshold current density of a surface emitting laser using the multiquantum well (MQW) is theoretically estimated to be about 60% that of a surface emitting laser with a bulk active layer. MQW structures with 10∼100 wells were grown by MOCVD and characterized by forming stripe lasers. A GaAlAs/GaAs MQW surface emitting laser was fabricated and the first lasing operation by current injection at 77 K under pulsed condition was obtained.
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Uenohara et al. (1989) studied this question.
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