Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics

We have developed one-transistor ferroelectric memory using lead titanate (PTO) as a gate dielectric directly formed on Si without any buffer layer. The PTO/Si metal–oxide–semiconductor field-effect transistor memory has shown a large threshold voltage shift of 1.6 V at only ±4V program/erase voltages. The corresponding good interface was achieved by lowering the anneal temperature to 450 °C. Besides the sharp capacitance change of 0.17μF∕Vcm2, it was also evidenced by the high mobility of 169cm2∕Vs close to high-κ HfO2. In addition, long retention >1000s and endurance >1011 stress cycles in the device suggested good memory characteristics.