The superior low-efficiency droop performance of semipolar (202̄1̄) InGaN light-emitting diodes (LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To unveil the mystery of this low droop and high efficiency, the emission dynamics of semipolar (202̄1̄) LEDs is investigated by time-resolved and steady-state photoluminescence (PL) measurements. Much smaller carrier lifetimes (radiative and nonradiative lifetime) were obtained from semipolar (202̄1̄) InGaN QWs compared with those on thec-plane samples, possibly due to the reduced quantum-confined Stark effects and smaller indium fluctuation on semipolar InGaN samples. The experimental findings indicate a much reduced excess carrier density in semipolar (202̄1̄) InGaN LEDs, which will impact the device performance. Based on this, a modified ABC equation with weak phase-space-filling (PSF) effect was used to model the droop characteristics of semipolar (202̄1̄) LEDs.
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Fu et al. (2016) studied this question.
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