We demonstrate continuous-wave (CW) operation of nonpolar m -plane InGaN/GaN laser diodes without Al-containing waveguide cladding layers. Thick InGaN quantum wells (QWs) are used to generate effective transverse optical mode confinement, eliminating the need for Al-containing waveguide cladding layers. Peak output powers of more than 25 mW are demonstrated with threshold current densities and voltages of 6.8 kA/cm 2 and 5.6 V, respectively. The unpackaged and uncoated laser diodes operated under CW conditions for more than 15 h.
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Farrell et al. (2007) studied this question.
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