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The fundamental electronic transport properties of GaAs evaporated films have been studied by means of resistivity vs temperature measurements, transient responses of photoconduction, and space charge limited current characteristics. The films were n type, with carrier concentrations of ∼1.4×1010/cm3 and electron mobilities of 4.4×102 cm2/V⋅sec at room temperature. Trap densities were ∼1014/cm3 and trap levels were found to be approximately 0.45 eV below the conduction band edge.
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Kiyoshi Takahashi (1972) studied this question.
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