Growth and metal–oxide–semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors

The growth of corundum-structured α-In 2 O 3 , showing an X-ray diffraction (0006) rocking curve full-width at half maximum of 185 arcsec and electron Hall mobility of 130 cm 2 V −1 s −1 , was demonstrated on a sapphire substrate with an α-Ga 2 O 3 buffer layer. An MOSFET of α-In 2 O 3 exhibited pinch-off characteristics and an on–off ratio of drain current of 10 6 . The use of mist chemical vapor deposition for the insulator-semiconductor structure was advantageous for low-cost devices.