GaAs/GaAs1−ySby superlattice light emitting diodes

We present the first report of light emitting diodes fabricated with GaAs/GaAs1−ySby superlattice active regions. Several device structures are investigated, including devices with and without AlxGa1−xAs confining layers. Preliminary measurements indicate peak optical intensities may be obtained at wavelengths near 1 μm, with an associated full width at half maximum ∼100 meV at 300 K. Room temperature forward I-V characteristics indicate an ideality factor of approximately two for these devices. Quantum efficiencies of ∼0.1% have been obtained for continuous operation.