An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances

A small-signal equivalent circuit model of III-V nitride MODFET's is presented. The metal-semiconductor ohmic contacts were modeled as a transmission line, as parasitic Z-elements cannot be modeled as a simple resistor/inductor discrete circuit due to high contact resistances. The model describes the highly resistive contacts with a good accuracy.