Electron mobility in n-InSb from 77 to 300K

The temperature dependence of the Hall coefficient R H , and conductivity sigma of n-InSb in the range 77-300K has been determined using the Van der Pauw technique. The experimental values of the Hall mobility are analysed in the relaxation time approximation for both the parabolic and non-parabolic cases, considering electron scattering by ionized impurities, polar optical phonons and acoustic deformation potential. The influence of electron-electron scattering on polar optical and ionized impurities has also been studied.