A lateral microscopic growth model for heterogeneous impurity incorporation during Czochralski crystal growth

The occurrence of heterogeneous impurity incorporation during growth of Czochralski silicon and germanium crystals is attributed to a microscopic kinetic mechanism of terrace growth. This is deduced from the close correspondence of striation patterns in bulk crystals with terrace traces in GaAs layers grown by liquid phase epitaxy. A simplified but generally applicable model of terrace growth for both epitaxial layers and bulk crystals is presented. The model does not depend on the occurence of constitutional supercooling.