Electrical properties of undoped layers of cubic SiC grown on Si(100) well-oriented and off-oriented substrates were evaluated by Hall measurements. The layers grown on off-oriented substrates showed electrical anisotropy. The origin of the electrical anisotropy was investigated by EBIC (electron beam induced current) and TEM (transmission electron microscope) observation. P+ or N2 + implantation was also investigated. Electrical activation of implanted impurities was improved by raising annealing temperatures. N2 +-implanted layers elicited higher electrical activation rates than P+-implanted layers. Planar-type p-n junction diodes were fabricated using ion implantation, and their characteristics were evaluated.
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Shibahara et al. (1989) studied this question.
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