New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy

A new Bi-containing III–V semiconductor InGaAsBi alloy was firstly grown by molecular beam epitaxy (MBE). The high crystalline quality of the InGaAsBi epilayer with smooth interfaces was confirmed by X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites.