New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy

GaN y As1-x-y Bi x epilayers were grown on GaAs by molecular beam epitaxy for the first time. Multilayered samples consisting of GaAs1-x Bi x , GaN y As1-y and GaN y As1-x-y Bi x showed distinct X-ray diffraction (XRD) peaks ascribed to each layer. The GaBi molar fraction, x, estimated by the combination of Rutherford backscattering spectroscopy and XRD was controlled in a range up to 4.0%. The GaN molar fraction estimated from the angular spacing of the XRD peak between GaAs1-x Bi x and GaN y As1-x-y Bi x increased up to 8.0% with increasing supply of activated nitrogen generated in rf plasma.