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We report, for the first time, temperature-dependent intersubband absorption data in doped pseudomorphic InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. In this composition range the absorption resonance varies in the range 6–7 μm for 50 Å wells, which agrees extremely well with theoretical calculations.
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Zhou et al. (1989) studied this question.
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