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The current-voltage (I-V) characteristics of ultrashallow p/sup +/-n and n/sup +/-p diodes, obtained using very-low-energy (<500-eV) implantation of B and As, are presented. the p/sup +/-n junctions were formed by implanting B/sup +/ ions into n-type Si
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Bousetta et al. (1992) studied this question.
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