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October 1, 1963Journal of Applied Physics

X-Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon

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Authors

GSG. H. SchwuttkeArizona State UniversityVSV. SilsMassachusetts Institute of Technology

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Schwuttke et al. (1963) studied this question.

synapsesocial.com/papers/6a901b60039ece43b30d35c9https://doi.org/10.1063/1.1729133
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1X-Ray Observations of Diffusion-Induced Dislocations in Silicon1962 · 105 citations
  2. 2X-Ray Observations of Partial Dislocations in Epitaxial Silicon Films1962 · 29 citations
  3. 3Stacking Faults in Epitaxial Silicon1962 · 58 citations
  4. 4X-Ray Diffraction Microscopy Study of Imperfections in Silicon Single Crystals1962 · 24 citations
  5. 5Direct Observation of Individual Dislocations by X-Ray Diffraction1958 · 312 citations