Laterally stacked varactor formed by ion implantation Planar, MMIC compatible, multi-junction varactors have been fabricated using a single n-type epitaxial layer followed by multiple energy Mg+ ion implantation. The junctions, numbering between 1 and 4 (= N), were formed laterally by selective implantation masking. Current-voltage measurements of the devices show the benefits of the stacking with breakdown voltage almost proportional to N.
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Knights et al. (1999) studied this question.
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