Comments on the distinction between ``striations'' and ``swirls'' in silicon

The distinction between ``swirls'' and ``striations'' in silicon crystals is reemphasized. The role of swirl-nucleated stacking faults in introducing excess reverse currents in p-n junctions is distinguished from the relatively inactive nature of striations with respect to carrier recombination-generation effects. The suggestion of Yoshikawa and Chikawa of a crystal-growth-direction-dependent electric field at striations has been examined using the electron-beam-induced-current (EBIC) technique. The contrast effects observed at striations using the EBIC technique show no effects of growth-dependent electric fields.