Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 28, 1995Electronics Letters

Visible-blind ultraviolet photodetectors based onGaN p - n junctions

View Full Paper
Ask AI
Bookmark
Share

Authors

QCQ. ChenOmega Optics (United States)MKM. Asif KhanGovernment of the United States of AmericaCSC. J. SunXiamen University of Technology

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Chen et al. (1995) studied this question.

synapsesocial.com/papers/6a90280dccd91641af4dc996https://doi.org/10.1049/el:19951190
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers1995 · 83 citations
  2. 2High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers1992 · 391 citations
  3. 3Schottky barrier photodetector based on Mg-doped p-type GaN films1993 · 188 citations
  4. 4Metal semiconductor field effect transistor based on single crystal GaN1993 · 365 citations
  5. 5Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition1991 · 174 citations