Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Novel metalorganic chemical vapor deposition system for GaN growth1991 · 371 citations
2. 2Properties of Al<i>x</i>Ga1−<i>x</i>N films prepared by reactive molecular beam epitaxy1982 · 274 citations
3. 3Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition1991 · 174 citations
4. 4High electron mobility GaN/Al<i>x</i>Ga1−<i>x</i>N heterostructures grown by low-pressure metalorganic chemical vapor deposition1991 · 178 citations
5. 5Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer1990 · 200 citations