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Oscillations of the magnetoresistance commensurate with the spatial modulation period of the growth surfaces were observed in selectively doped GaAs quantum wells with AlAs/GaAs superlattice barriers grown by molecular beam epitaxy. The experimental data obtained are explained by the lateral potential modulation of the two-dimensional electron gas in narrow GaAs quantum wells with corrugated heteroboundaries and agree with the two-dimensional distribution of the local capacitance in such structures.
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Bakarov et al. (2003) studied this question.
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