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Measurements are made of the current‐voltage characteristics of monocrystalline GaSe specimens within the strong field region of up to 4 × 104 V/cm in the temperature range from 300 to 125 °K. The data obtained are discussed in terms of Frenkel's mechanism of thermoelectronic ionization {article}{empty}{document}(σ = σ ₀ eβ √ E){document} . The low field value for the activation energy of carriers, is found to be ΔE0 = 0.18 eV, and decreases with increasing electric field according to the formula ΔE = ΔE0 −2 {article}{empty}{document}e√e\,E/ε{document} ab (e electronic charge, E electric field intensity, ϵ high‐frequency dielectric constant). Correlating the experimental data with Frenkel's theory, values of ϵ = 8 are obtained for gallium selenide.
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Тагиев et al. (1969) studied this question.
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