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July 1, 2002Journal of Applied Physics

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

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Authors

MMMichael J. ManfraPurdue University West LafayetteNWNils WeimannUniversity of Duisburg-EssenJHJulia W. P. HsuThe University of Texas at Dallas

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Manfra et al. (2002) studied this question.

synapsesocial.com/papers/6a90354df5c79ce9992da3a1https://doi.org/10.1063/1.1484227
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