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January 17, 2000Applied Physics Letters

Shallow electron traps at the 4H–SiC/SiO2 interface

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Authors

VAV. V. Afanas’evIMECASA. StesmansKU LeuvenMBM. BaßlerUppsala University

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Afanas’ev et al. (2000) studied this question.

synapsesocial.com/papers/6a9035de4aebf474cb341436https://doi.org/10.1063/1.125737
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