Hole trapping in the oxides thermally grown on different polytypes of SiC (3C, 4H, 6H) was studied using photogeneration of charge carriers in SiO2 and electron-spin-resonance spectroscopy. Oxygen vacancy defects were found to be the dominant hole traps in the oxide. Generation of thermally unstable SiC/SiO2 interface states is observed during hole injection, which resembles creation of hydrogen-related states at the Si/SiO2 interface.
No takes yet. Share an insight, caveat, or question.
Afanas’ev et al. (1996) studied this question.