Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 2007Japanese Journal of Applied Physics

Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire

View Full Paper
Ask AI
Bookmark
Share

Authors

QFQ. FareedNitek (United States)VAV. AdivarahanNitek (United States)MGMikhail GaevskiUniversity of South Carolina

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Fareed et al. (2007) studied this question.

synapsesocial.com/papers/6a90360af5c79ce9992da3d6https://doi.org/10.1143/jjap.46.l752
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Investigation of optical‐output‐power degradation in 365‐nm UV‐LEDs2006 · 32 citations
  2. 2Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films1996 · 831 citations
  3. 3Near-band-edge photoluminescence of wurtzite-type AlN2002 · 107 citations
  4. 4Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm2002 · 82 citations
  5. 5Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition2000 · 48 citations