Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001̄) Metal–Oxide–Semiconductor Field-Effect Transistors

Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal–Oxide–Semiconductor Field-Effect Transistors, Okamoto, Mitsuo, Makifuchi, Youichi, Iijima, Miwako, Sakai, Yoshiyuki, Iwamuro, Noriyuki, Kimura, Hiroshi, Fukuda, Kenji, Okumura, Hajime