We have studied the mechanism of off-state breakdown in AlGaN/GaN high electron mobility transistors (HEMTs). The off-state breakdown voltage (BVoff) had a positive temperature coefficient of 0.12 V/K. BVoff was represented by a monotonous decreasing function of gate leakage current (Ileak), which was analytically derived from the impact ionization coefficient. Our results suggest that off-state breakdown in AlGaN/GaN HEMTs originated from impact ionization in the channel, which was caused by the gate leakage current. BVoff increased with decreasing Ileak by a plasma surface treatment before gate metal deposition. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Nakao et al. (2003) studied this question.
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