Answers are grounded in this paper and cite their sources.
An AlGaN/GaN HFET incorporating a piezoelectrically enhanced two-layer barrier structure has been fabricated and characterised. The gate leakage current was observed to be suppressed by one order of magnitude, compared to that in a conventional AlGaN/GaN HFET. Breakdown voltages in the piezoelectrically enhanced and conventional HFET structures are ~100 V and have positive temperature coefficients.
No takes yet. Share an insight, caveat, or question.
Dang et al. (1999) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: