Lateral n-channel inversion mode 4H-SiC MOSFETs

Advances in MOS devices on silicon carbide (SiC) have been greatly hampered by the low inversion layer mobilities. In this paper, the electrical characteristics of lateral n-channel MOSFETs fabricated on 4H-SiC are reported for the first time. Inversion layer electron mobilities of 165 cm/sup 2//V/spl middot/s in 4H-SiC MOSFETs were measured at room temperature. These MOSFETs were fabricated using a low temperature deposited oxide, with subsequent oxidation anneal, as the gate dielectric.