Electrical properties of β-SiC metal-oxide-semiconductor structures

Using conductance and capacitance data for metal-oxide-semiconductor (MOS) structures on n-type β-SiC, the density of states at the β-SiC/SiO2 interface, their location in the bandgap of β-SiC, and the electron capture probability are obtained. The MOS structures were fabricated by oxidizing β-SiC in wet oxygen. It is found that interface-state density of the order of 1011 states/(cm2-eV) is located between 0.28–0.40 eV below the conduction-band edge of β-SiC. The electron-capture probability is in the range from 4.2×10−9 to 8.4×10−8 cm3/s. This study shows that the electrical properties of β-SiC MOS structures are similar to that of Si MOS structures.