High Quality SiO[sub 2] Deposited at 80°C by Inductively Coupled Plasma Enhanced CVD for Flexible Display Application

In this article, we investigated the high quality SiO 2 deposited at 80 ° C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48 × 10 10 cm − 2 eV − 1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated under 100 ° C by excimer laser annealing. The electron mobility can reach 225 cm 2 / V s . The interface density of SiO 2 is comparable with that of thermal oxide. The high quality gate oxide is very suitable for fabricating high performance TFTs for large-area flexible displays on plastics.