Pulsed 1-watt heterojunction bipolar transistors at 35 GHz

This is the authors' abstract. We don't add key points for this paper.

High-peak-power pulsed operation of common emitter AlGaAs-GaAs HBTs, at 35 GHz is reported. A 1.0-W peak power with 2.3-dB associated gain and power-added efficiency of 28% is obtained. Small devices gave up to 43% power-added efficiency with 190-mW output at 4.8-dB gain. The pulse length was 300 ns, and the duty cycle was 33%. The device design, small-signal characteristics, and power results obtained are described.>