We report the small- and large-signal results of 250 nm InP/GaAsSb Double Heterojunction Bipolar Transistors (DHBTs) in G-band. We characterized the frequency behavior of the saturated output power P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT,SAT</inf> and of power-added efficiency (PAE) in class-A operation. At 140 GHz, we find P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT,SAT</inf> = 11.1 dBm with a simultaneous record PAE = 39.2%. Together with the smallsignal cutoff frequencies f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> /f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> > 0.48/1.1 THz, these data demonstrate the suitability of InP/GaAsSb DHBTs for highpower and high-efficiency sub-mm power amplifiers (PA).
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Ciabattini et al. (2024) studied this question.
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