Using the temperature-dependent thermal conductivity of GaAs, the heat-flow in typical FET structures can be realistically analysed numerically. A heat-flow programme is used in the evaluation of the reduction in thermal resistance by changing thermal-flow spreading in the substrate, such as the contribution by high thermal-conductivity top-surface metal films. Similarly the thermal transients are evaluated by using the relevant specific heat capacities. The method often used for Si structures for assessing the quality of heat sinking is applied to GaAs devices.
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Dell et al. (1984) studied this question.
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