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Device-quality GaAs layers have been grown on silicon-on-sapphire (SOS) substrates by molecular beam epitaxy (MBE). Microwave MESFET's (gate length of ~0.8 µm) with transconductance of 140 mS/ mm,fₘₐₓ = 20GHz, andfT = 8.3GHz have been fabricated in these layers.
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Turner et al. (1987) studied this question.
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