Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

We have recently reported the occurrence of phase separation in InxGa1−xN samples with x>0.25. Theoretical studies have suggested that InxGa1−xN can phase-separate asymmetrically into a low InN% phase and an ordered high InN% phase. In this letter, we report on the existence of simultaneous phase separation and ordering of InxGa1−xN samples with x>0.25. In these samples, phase separation was detected by both transmission electron microscopy selected area diffraction (TEM-SAD) and x-ray diffraction. Ordering was detected by both imaging and TEM-SAD.