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The one-dimensional Poisson, continuity, and the trap rate equations are solved numerically to study the buildup of charge in silicon dioxide due to radiation. The flat-band voltage shift (ΔVfb) is obtained as a function of total dose, the oxide thickness, the applied gate voltage, and the centroid of the trap distribution. The effect of including electron traps is studied. The results of the simulation are found to compare well with experimental data.
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Vasudevan et al. (1991) studied this question.
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