High gain resonant cavity enhanced InGaAs/AlGaAsheterojunction phototransistor resonant at 930 nm

A resonant cavity enhanced InGaAs/AlGaAs phototransistor with high responsivity in the transmission window of the GaAs substrate is presented. The resonant wavelength is 929 nm with a full width at half maximum of 9 nm. The peak responsivity increases from 17 A/W at 0.1 µW incident optical power to 400 A/W at 100 µW.