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August 20, 1990Applied Physics Letters

Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

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MÜM. Selim ÜnlüBoston UniversityKKKatsumi KishinoSophia UniversityJCJ-I. ChyiUniversity of Illinois Urbana-Champaign

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Ünlü et al. (1990) studied this question.

synapsesocial.com/papers/6a93f8cec2fc253c55d68d74https://doi.org/10.1063/1.103410
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