Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processing

Si/sub 1-x/Ge/sub x//Si p-N heterojunctions prepared by a chemical vapor deposition technique, limited reaction processing (LRP) were characterized using DC electrical measurements, transmission electron microscopy (TEM), and X-ray topography. Heterojunctions with Si/sub 1-x/Ge/sub x/ layer thickness ranging from 52 to 295 nm and a constant Ge fraction of 23% were fabricated to study the effect of increasing the number of misfit dislocations on the device characteristics. Devices with the thinnest layers (>