Analysis of temperature sensitive operation in 1.6-μm In0.53Ga0.47As lasers

Temperature sensitive operations in 1.6-μm In0.53Ga0.47As lasers are analyzed assuming an extrinsic optical loss due to impurities. As the intrinsic loss mechanism, the intervalence-band absorption is considered for photons and the Auger recombination for excited carriers. The hot carrier effect is taken into account in terms of the hole population in the spin splitoff band. Experimental data can be well explained in terms of the extrinsic optical loss, which is most likely to occur in the cladding region outside the active region, with an activation energy of 0.19–0.28 eV.