Electrophysical properties of indium oxide pyrolytic films with disordered structure

An analysis is given of charge transfer in In2O3 thin layers, prepared by decomposition of indium acetylacetonate in an inert gas flow, as related to film structure (amorphous, ultra-disperse and polycrystalline) at weak and high fields. The temperature dependences of electric conductivity and Hall- and drift mobilities were investigated in the temperature range from 77 to 465 °K and in the frequency range from 10 to 107 Hz. The character of structural disordering is shown to influence the behaviour of charge transfer in In2O3 thin films. Weak field conduction mechanisms are characterized by internal potential barriers in the film structure and by specific features of the scattering by charged defects.