1 W diffraction-limited-beam operation of resonant-optical-waveguide diode laser arrays at 0.98 μm

Resonant arrays of antiguided diode lasers operating at 0.98 μm are reported for the first time. The devices use a strained-layer quantum-well InGaAs/AlGaAs structure. A diffraction-limited beam pattern is observed up to 1 W under pulsed operation and 0.25 W under CW operation. To the best of the authors' knowledge, this is the highest power in a diffraction-limited beam from diode laser arrays at 0.98 μm.